Comparison of individual SiC JBS chips and JBS stacks connected in series by diffusion welding

Author

Sleptsuk, N. ; Korolkov, O. ; Toompuu, J. ; Rang, T.

Author_Institution

Dept. of Electron., Tallinn Univ. of Technol., Tallinn, Estonia

fYear

2010

fDate

4-6 Oct. 2010

Firstpage

81

Lastpage

84

Abstract

The comparison of JBS chips and JBS stacks connected in series by diffusion welding DW has been made using deep level spectroscopy (DLTS). As it was expected, JBS stacks are characterized by higher volumes of reverse voltage (Ur), higher series resistance (Rs) and, therefore, higher forward voltage (Uf). In the stacks two times reducing of capacitance has been fixed. Diffusion welding (DW) technique used for stacks allows to solve many packaging problems, in particular - reduction of thermal resistance and incresing in operation temperature.

Keywords

Schottky diodes; deep level transient spectroscopy; silicon compounds; thermal conductivity; welding; DLTS; JBS stacks; SiC; deep level spectroscopy; diffusion welding; forward voltage; junction barrier Schottky chips; reverse voltage; series resistance; thermal resistance; Capacitance; Metallization; Schottky diodes; Semiconductor device measurement; Silicon carbide; Welding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Conference (BEC), 2010 12th Biennial Baltic

Conference_Location

Tallinn

ISSN

1736-3705

Print_ISBN

978-1-4244-7356-4

Electronic_ISBN

1736-3705

Type

conf

DOI

10.1109/BEC.2010.5630910

Filename

5630910