Scattering of carries in δ-doped by Mn InGaAs quantum well with hole-mediated ferromagnetism

Author

Shchurova, Ljudmila ; Kulbachinskii, Vladimir

Author_Institution

Dept. of Solid State Phys., P.N. Lebedev Phys. Inst. of RAS, Moscow, Russia

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

118

Lastpage

121

Abstract

Thermodynamic, transport and magnetotransport properties of free charge carriers in the diluted magnetic semiconductor with a quantum well (QW) GaAs/InGaAs/GaAs delta-doped by C and Mn are investigated. For definition of hole density thermodynamic calculations of the composition of the system from free holes, atoms and ions Mn- have been carried out. Calculations of temperature dependence of resistance and magnetoresistance in quantum well have been obtained. The contributions of various hole scattering mechanisms in resistance are analysed. The reasons for occurrence of negative magnetoresistance are explained quantitatively as the reduction of the spin-flip scattering due to aligning spins by magnetic field. The quantitative consistency of the calculated and of the measured temperature dependence of sheet resistance and magnetoresistance were obtained.

Keywords

III-V semiconductors; ferromagnetic materials; gallium arsenide; indium compounds; magnetoresistance; manganese; semiconductor quantum wells; semimagnetic semiconductors; InGaAs:Mn; diluted magnetic semiconductor; free charge carriers; hole density thermodynamic calculations; hole scattering mechanisms; hole-mediated ferromagnetism; magnetoresistance; magnetotransport properties; negative magnetoresistance; quantum well; sheet resistance; spin-flip scattering; thermodynamic properties; Charge carriers; Gallium arsenide; Indium gallium arsenide; Magnetic field measurement; Magnetic properties; Magnetic semiconductors; Magnetoresistance; Particle scattering; Temperature dependence; Thermodynamics; diluted magnetic semiconductors; negative magnetoresistance; quantum wel; scattering of carriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, NSW

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802105

Filename

4802105