Title :
Reliable contact metallization technology with Al-Si-Cu/TiN/Ti system for CMOS VLSIs
Author :
Ohshima, Yoichi ; Mori, Seiichi ; Yoshikawa, Kuniyoshi
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
An anomalous p+ contact resistance increase observed under a certain process condition was investigated. It was found the oxidation process condition after ion-implantation for the diffusion layer strongly affects the p+ contact resistance in the Al-Si-Cu/TiN/Ti barrier metal system. From the analysis of this phenomenon, an improved contact hole process is proposed that simultaneously realizes a self-aligned contact structure to overcome this failure. Megabit EPROMs, utilizing the TiN/Ti system, were fabricated to investigate the interconnection reliability
Keywords :
CMOS integrated circuits; EPROM; VLSI; aluminium alloys; contact resistance; copper alloys; integrated circuit technology; metallisation; reliability; silicon alloys; titanium; titanium compounds; AlSiCu-TiN-Ti; CMOS VLSIs; EPROMs; contact hole process; contact metallization technology; diffusion layer; interconnection reliability; ion-implantation; oxidation process condition; p+ contact resistance; self-aligned contact structure; Boron; CMOS technology; Contact resistance; EPROM; Fabrication; Metallization; Oxidation; Surface resistance; Tin; Very large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78012
