Impact of channel thickness on the electrical characteristics of nanoscale Double Gate SOI MOSFET with metal source-drain

We have presented the quantum simulation of a Double Gate SOI MOSFET with metal source-drain. The operation of such device is investigated and the influence of the channel and gate oxide thickness on the electrical characteristics is elaborated. We have shown that in a double gate SOI MOSFET with metal source/drain, tunneling is the main current component. The tunneling probability through the Schottky barrier increases with decreasing channel and gate oxide thickness simultaneously, allowing for an excellent electrical performance with steep subthreshold slope and high transconductance due to better gate control over the channel.