The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

Author

Logan, D.F. ; Jessop, P.E. ; Knights, A.P. ; Gwilliam, R.M. ; Halsall, M.P.

Author_Institution

Dept. of Eng. Phys., McMaster Univ., Hamilton, ON

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

152

Lastpage

155

Abstract

The influence of the charge state of ion implantation induced defects in SOI waveguides on the absorption of sub-bandgap wavelengths is described. It is found that waveguides pre-doped with boron absorb with significantly greater efficiency than those pre-doped with phosphorus. Following annealing at 300degC this difference is approximately 8 dBcm^-1, while the intrinsic loss of the waveguides is limited to 2 dBcm^-1. These results have significant ramifications for a number of integrated optical devices fabricated in silicon.

Keywords

boron; phosphorus; semiconductor doping; silicon-on-insulator; waveguides; SOI waveguides; boron; doping type; implantation induced defects; integrated optical devices; ion implantation induced defects; optical absorption; phosphorus; silicon-on-insulator waveguides; sub-bandgap wavelengths; Absorption; Annealing; Boron; Doping; Ion implantation; Optical devices; Optical losses; Optical waveguides; Particle beam optics; Silicon on insulator technology; absorption; integrated optics; ion implantation; silicon; waveguides;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802114

Filename

4802114