Double boundary trench isolation effects on a stacked gradient homojunction photodiode array

Author

Jansz, Paul V. ; Hinckley, Steven

Author_Institution

Phys. Res. Group, Edith Cowan Univ., Perth, WA

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

156

Lastpage

159

Abstract

The effect of the width of inter-pixel double boundary trench isolation on the response resolution of a two dimensional CMOS compatible stacked gradient homojunction photodiode array was simulated. Insulation and P-doped double boundary trench isolation were compared. Both geometries showed improved crosstalk suppression and enhanced sensitivity compared to photodiode geometries previously investigated, combined with a reduction in fabrication complexity for the insulation DBTI configuration.

Keywords

CMOS integrated circuits; crosstalk; isolation technology; photodiodes; CMOS; crosstalk suppression; double boundary trench isolation effects; enhanced sensitivity; inter-pixel nested ridges; quantum efficiency; stacked gradient homojunction photodiode array; Australia; Crosstalk; Geometrical optics; Geometry; Insulation; Lighting; Optical arrays; Photodiodes; Physics; Solid modeling; CMOS; SiO2; crosstalk; double boundary trench isolation; inter-pixel nested ridges; quantum efficiency; stacked gradient homojunction photodiode;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802115

Filename

4802115