DocumentCode
3000935
Title
Modeling of Optical Properties in Silicon Nanocrystals
Author
Karbassian, Farshid ; Ghafoorifard, Hasan ; Mohajerzadeh, Shams
Author_Institution
Sch. of Electr. Eng., Amirkabir Univ. of Technol., Tehran
fYear
2008
fDate
July 28 2008-Aug. 1 2008
Firstpage
160
Lastpage
162
Abstract
While bulk silicon is a poor emitter of light, silicon nanocrystals are shown to be promising materials for light-emitting devices. Despite all the efforts on the fabrication and modeling of silicon nanostructures, the origin of their light emission is still controversial. In this paper we investigate models that have been proposed for silicon nanostructures. A simple model based on solving the Schrodinger equation for quantum dots for light emission in silicon nanocrystals has been proposed. It is shown that quantum confinement is responsible for luminescence in the red portion of spectrum, while the surface passivants are responsible for emission in the blue and green region of the spectrum. The validity of this modeling has been proven by experimental data.
Keywords
Schrodinger equation; elemental semiconductors; nanostructured materials; photoluminescence; semiconductor quantum dots; silicon; Schrodinger equation; Si; light emission; light-emitting devices; luminescence; optical properties; quantum confinement; quantum dots; silicon nanocrystals; silicon nanostructures; surface passivants; Nanocrystals; Nanostructured materials; Nanostructures; Optical device fabrication; Optical materials; Potential well; Quantum dots; Schrodinger equation; Silicon; Stimulated emission; light-emitting device; luminescence; nanotechnology; silicon nanocrystals;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location
Sydney, SA
ISSN
1097-2137
Print_ISBN
978-1-4244-2716-1
Electronic_ISBN
1097-2137
Type
conf
DOI
10.1109/COMMAD.2008.4802116
Filename
4802116
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