Title :
Modeling p-i(multi quantum well)-n solar cells: a contribution for a near optimum design
Author :
Renaud, Philippe ; Vilela, M.F. ; Freundlich, A. ; Bensaoula, A. ; Medelci, N.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
Abstract :
The AMO efficiency of p-i-n solar cells with quantum wells in the intrinsic region is calculated with the consideration of a large range of geometrical parameters. The near optimum design is set when the device exhibits an increase in photocurrent output with minimum open circuit voltage degradation. The method is applied to an InP cell with InGaAs MQWs added in the intrinsic region. The authors´ model leads to estimates of the p-i(MQW)-n photocurrent and open circuit voltage; as well as efficiency versus well and intrinsic zone widths. The effect of the generation-recombination current on device performance is also treated. Moreover, the use of internal Bragg reflectors placed between the buffer layer and the cell structure is investigated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor device models; semiconductor quantum wells; solar cells; AMO efficiency; InP-InGaAs; buffer layer; cell structure; device performance; efficiency; generation-recombination current; geometrical parameters; internal Bragg reflectors; intrinsic region; intrinsic zone widths; multi quantum wells; open circuit voltage degradation; optimum design; p-i-n solar cells modelling; photocurrent output; Buffer layers; Circuits; Degradation; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photoconductivity; Photovoltaic cells; Quantum well devices; Voltage;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520649
