Experimental extraction of the electron impact-ionization coefficient at large operating temperatures

Author

Reggiani, Susanna ; Gnani, Elena ; Rudan, Massimo ; Baccarani, Giorgio ; Corvasce, Chiara ; Barlini, Davide ; Ciappa, Mauro ; Fichtner, Wolfgang ; Denison, Marie ; Jensen, N. ; Groos, Gerhard ; Stecher, Matthias

Author_Institution

Dept. of Electron., Bologna Univ., Italy

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

407

Lastpage

410

Abstract

A theoretical and experimental investigation on the electron impact ionization in silicon has been carried out in the temperature range between 300 and 773 K. The impact-ionization model proposed here amply extends the range of simulation tools up to nearly 800 K, which is especially important in order to predict the failure threshold of ESD-protection and power devices.

Keywords

electron impact ionisation; electrostatic discharge; high-temperature effects; integrated circuit modelling; integrated circuit testing; power integrated circuits; 300 to 773 K; ESD protection; electron impact-ionization coefficient; failure threshold; impact-ionization model; large operating temperatures; power devices; simulation tools; Electrons; Electrostatic discharge; Heating; Impact ionization; Predictive models; Protection; Silicon; Temperature distribution; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419171

Filename

1419171