Design-oriented substrate noise coupling macromodels for heavily doped CMOS processes

Author

Samavedam, A. ; Mayaram, K. ; Fiez, Terri

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

Volume

6

fYear

1999

fDate

36342

Firstpage

218

Abstract

Macromodels for substrate noise coupling in heavily doped substrates have been developed. These models are simple and express the substrate coupling directly as a function of the spacing between the injection and sensing contacts. The models require only six parameters that can be readily extracted from a few device simulations and measurements. The model is validated for a 2 μm and a 0.5 μm CMOS process where it is shown that the simple model predicts the noise coupling accurately

Keywords

CMOS integrated circuits; circuit simulation; heavily doped semiconductors; integrated circuit design; integrated circuit modelling; integrated circuit noise; 0.5 micron; 2 micron; IC design; device simulations; heavily doped CMOS processes; injection contacts; sensing contacts; substrate noise coupling macromodels; CMOS process; Circuit simulation; Computer science; Coupling circuits; Curve fitting; Frequency; Impedance; Integrated circuit modeling; Predictive models; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780134

Filename

780134