Statistical modeling of MOS transistor mismatch based on the parameters´ autocorrelation function

Author

Conti, Massimo ; Crippa, Paolo ; Orcioni, Simone ; Turchetti, Claudio

Author_Institution

Dipt. di Elettronica e Autom., Ancona Univ., Italy

Volume

6

fYear

1999

fDate

36342

Firstpage

222

Abstract

In this paper a model of MOS transistor mismatch based on autocorrelation function of the statistical parameters is proposed. Firstly a statistical model which maps the statistical behavior of technological parameters considered as a source of errors, into the behavior of device parameters, which depends on device geometry (area and layout) and mutual distances between devices, is derived. Then particular forms for the autocorrelation function are proposed so that expressions for the parameter mismatch variance can be obtained. The model has also been used to analyze mismatch effect on interdigitated and cross-coupled structures

Keywords

MOS integrated circuits; MOSFET; integrated circuit design; integrated circuit modelling; semiconductor device models; statistical analysis; MOS transistor mismatch; autocorrelation function; cross-coupled structures; device geometry; device parameters; interdigitated structures; mutual distances; parameter mismatch variance; statistical modeling; technological parameters; Analog circuits; Autocorrelation; Covariance matrix; Digital-analog conversion; Displays; Fabrication; Geometry; MOSFETs; Semiconductor device modeling; Solid modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1999. ISCAS '99. Proceedings of the 1999 IEEE International Symposium on

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5471-0

Type

conf

DOI

10.1109/ISCAS.1999.780135

Filename

780135