Author :
Tiemeijer, L.F. ; Havens, R.J. ; de Kort, R. ; Scholten, A.J. ; van Langevelde, R. ; Klaassen, D.B.M. ; Sasse, G.T. ; Bouttement, Y. ; Petot, C. ; Bardy, S. ; Gloria, D. ; Scheer, P. ; Boret, S. ; Van Haaren, B. ; Clement, C. ; Larchanche, J.-F. ; Lim, I.
Abstract :
We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency fmax (280 GHz), varactor tuning range and varactor and inductor quality factor.
Keywords :
CMOS logic circuits; Q-factor; nanoelectronics; radiofrequency integrated circuits; 90 nm; CMOS technology; RF performance; inductor quality factor; oscillation frequency; varactor quality factor; varactor tuning range; CMOS technology; Capacitance; Cobalt; Fingers; Integrated circuit interconnections; Logic devices; Q factor; Radio frequency; Tuning; Varactors;
