Title :
SEM analysis and selenization of Cu-Zn-Sn sequential films produced by evaporation of metals
Author :
Volobujeva, O. ; Mellikov, E. ; Raudoja, J. ; Grossberg, M. ; Bereznev, S. ; Altosaar, M. ; Traksmaa, R.
Author_Institution :
Dept. of Mater. Sci., Tallinn Univ. of Technol., Tallinn
fDate :
July 28 2008-Aug. 1 2008
Abstract :
The formation of Cu2SnZnSe4 thin films in the selenization of different sequential metallic and alloy films is investigated. It is shown that the main process of low temperature selenization (up to 300degC) is the formation of different binary copper selenides on the layer surface. High temperature selenization (over 400degC) leads to the formation of Cu2ZnSnSe4 phase with some excess of a separate ZnSe phase. The content of ZnSe diminishes with the rise of the selenization temperature, but the selenized films stayed always multiphased. The size of the formed Cu2ZnSnSe4 crystals is controlled by the composition of the precursor.
Keywords :
copper compounds; scanning electron microscopy; semiconductor growth; semiconductor materials; semiconductor thin films; tin compounds; vapour deposition; zinc compounds; Cu2SnZnSe4; SEM; alloy films; binary copper selenides; evaporation; low temperature selenization; selenization temperature; sequential films; thin films; Amorphous materials; Amorphous silicon; Coatings; Crystallization; Fabrication; Passivation; Photovoltaic cells; Plasma temperature; Thermal stresses; Voltage; Cu2ZnSnSe4; precursor composition; selenization; temperature dependence; thin films;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on
Conference_Location :
Sydney, SA
Print_ISBN :
978-1-4244-2716-1
Electronic_ISBN :
1097-2137
DOI :
10.1109/COMMAD.2008.4802140
