Study on boron doped silicon quantum dots superlattices for all-silicon tandem solar cells

Author

Hao, Xiaojing ; Cho, Eunchel ; Park, Sangwook ; Shen, Yansong ; Conibeer, Gavin ; Green, Martin Andrew

Author_Institution

ARC Photovoltaics Centre of Excellence, Univ. of New South Wales, NSW

fYear

2008

fDate

July 28 2008-Aug. 1 2008

Firstpage

297

Lastpage

300

Abstract

Optimized chemical structure was proposed for boron-doped Si quantum dots superlattices. Boron-doped Si quantum dots superlattices were then synthesized by a co-sputtering technique, and characterized for their promising application in all-Si tandem solar cells. The formation of Si quantum dots was confirmed by transmission electron microscopy. The effect of boron dopant concentration on the Si crystallization was investigated. Lateral resistivity of Si quantum dots superlattices was studied. The results showed that boron addition does not affect the quantum dot size, but significantly reduces the resistivity of Si quantum dots superlattices.

Keywords

boron; chemical structure; doping profiles; electrical resistivity; elemental semiconductors; semiconductor quantum dots; semiconductor superlattices; silicon; solar cells; transmission electron microscopy; Si:B; all-silicon tandem solar cells; boron dopant concentration; boron doped silicon quantum dots superlattices; chemical structure; cosputtering; crystallization; lateral resistivity; quantum dot size; transmission electron microscopy; Annealing; Bonding; Boron; P-n junctions; Photovoltaic cells; Quantum dots; Semiconductor device doping; Semiconductor films; Silicon; Superlattices; Si quantum dots; boron doping; solar cells;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2008. COMMAD 2008. Conference on

Conference_Location

Sydney, SA

ISSN

1097-2137

Print_ISBN

978-1-4244-2716-1

Electronic_ISBN

1097-2137

Type

conf

DOI

10.1109/COMMAD.2008.4802151

Filename

4802151