DocumentCode
3001753
Title
Characteristics of ALD HfSiOx using new Si precursors for gate dielectric applications
Author
Kim, Yun-Seok ; Lim, Ha Jin ; Jung, Hyung-Suk ; Lee, Jong-Ho ; Park, Jae-Eun ; Han, Sung Kee ; Lee, Jung Hyoung ; Doh, Seok-Joo ; Kim, Jong Pyo ; Lee, Nae-In ; Kang, Ho-Ky ; Chung, Youngsu ; Hae Young Kim ; Nam Kyu Lee ; Ramanathan, Sasangan ; Seidel, Tom
Author_Institution
Syst. LSI Div., Samsung Electron. Co., Ltd., Kyunggi-Do, South Korea
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
511
Lastpage
514
Abstract
We have successfully developed a process for ALD HfSiOx that can provide excellent compositional control by using new Si precursors, Si2Cl6 (HCDS) and SiH[(CH3)2]3 (tDMAS). In addition, comparisons of electrical properties of HfSiOx using two Si precursors have been performed. CMOSFET with HfSiOx using HCDS results in better reliability characteristics than tDMAS. Superior electron and hole mobility (100% and 90% of universal curve at 0.8MV/cm) are also achieved with HCDS. Consequently, HCDS has the potential to be used as a Si precursor for ALD HfSiOx.
Keywords
CMOS integrated circuits; MOSFET; atomic layer deposition; dielectric materials; electron mobility; hafnium compounds; hole mobility; semiconductor device reliability; silicon compounds; ALD; CMOSFET; HfSiO; Si precursors; Si2Cl6; SiH[(CH3)2]3; compositional control; electrical properties; electron mobility; gate dielectric applications; hole mobility; reliability characteristics; Annealing; Atomic layer deposition; CMOSFETs; Charge carrier processes; Dielectric substrates; Electron mobility; Fabrication; Hafnium; Large scale integration; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419203
Filename
1419203
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