Flip-chip mounted 26 V GaInP/GaAs power HBTs

Author

Kurpas, P. ; Maaßdorf, A. ; Neuner, M. ; Heymann, P. ; Janke, B. ; Schnieder, F. ; Bergunde, T. ; Graßhoff, T. ; Heinrich, W. ; Würfl, J. ; Doser, W. ; Blanck, H. ; Auxemery, Ph.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin, Germany

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

561

Lastpage

564

Abstract

GaInP/GaAs HBTs suitable for high-voltage operation (≥ 26 V) were developed. The HBTs show high current driving capabilities delivering at least 3 A of peak DC current. Furthermore, high power levels beyond 10 W corresponding to power densities of up to 360 kW/cm² were achieved, at an output impedance in the 10 to 15 ohms range. These results were reached only after low thermal resistance mounting using a proprietary flip-chip soldering process. The mounted HBT power cells are available in package. They deliver up to 14 W of output power at 2 GHz and a bias voltage of 26 V, with high PAE of up to 71 % and high gain of 14 dB. Thus, these power cells are very promising for power applications with extended bandwidth requirements, such as multi-band base-station amplifiers.

Keywords

III-V semiconductors; UHF bipolar transistors; flip-chip devices; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; 14 W; 14 dB; 2 GHz; 26 V; GaInP-GaAs; extended bandwidth requirements; flip-chip soldering process; high current driving capabilities; high-voltage operation; low thermal resistance mounting; multi-band base-station amplifiers; power HBT; power cells; Gain; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Packaging; Power amplifiers; Power generation; Soldering; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419220

Filename

1419220