Series Junction Resistance and Its Spatial Variation from Graded Barrier Structure of DBR Layers in 980nm VCSELS

Author

Huang, M. ; Wu, J. ; Cui, H.Y. ; Qian, J.Q.

Author_Institution

Dept. of Appl. Phys., Beihang Univ., Beijing, China

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

Series junction resistance and its spatial variation due to temperature effect from the graded barrier structure of Al_xGa_1-xAs DBR reflectors in 980nm VCSELs are modeled by combining thermionic emission model and finite difference method. The minimum of DBR resistance and the temperature-induced spatial variation of the resistance are calculated to optimize the DBR structure and improve the thermal effect of the VCSELs.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; electrical resistivity; finite difference methods; gallium arsenide; laser cavity resonators; semiconductor lasers; surface emitting lasers; thermionic emission; Al_xGa_1-xAs; DBR layers; DBR reflectors; DBR resistance; DBR structure; VCSEL; finite difference method; graded barrier structure; series junction resistance; temperature-induced spatial variation; thermal effect; thermionic emission model; wavelength 980 nm; Distributed Bragg reflectors; Junctions; Photonic band gap; Resistance; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6270906

Filename

6270906