Title :
A 0.13μm MRAM with 0.26×0.44μm2 MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz
Author :
Ueno, S. ; Eimori, T. ; Kuroiwa, T. ; Furuta, H. ; Tsuchimoto, J. ; Maejima, S. ; Iida, S. ; Ohshita, H. ; Hasegawa, S. ; Hirano, S. ; Yamaguchi, T. ; Kurisu, H. ; Yutani, A. ; Hashikawa, N. ; Maeda, H. ; Ogawa, Y. ; Kawabata, K. ; Okumura, Y. ; Tsuji, T.
Author_Institution :
LSI Manuf. Technol. Unit, Renesas Technol. Corp., Hyogo, Japan
Abstract :
A 0.13μm magnetoresistive random access memory (MRAM) with 0.26×0.44μm2 magnetic-tunneling-junction (MTJ) is presented for 1.2V high-speed operation beyond 143MHz, where MTJ parameters are best-tuned for its maximum performance. We have found that there is a universal relationship between magneto-resistance (MR) and resistance-area products (RA) for MTJs with CoFe/AlOx material system, and the universality is extrapolated upwards by CoFeB/AlOx material system. Best MR-RA combination is realized on this universality. A 5.2ns sensing is demonstrated by a 0.13μm MRAM with optimized MTJ. This advanced MRAM also shows good reliability for endurance/retention characteristics and strong access immunity in high temperature up to 150°C.
Keywords :
aluminium compounds; boron alloys; cobalt alloys; high-speed techniques; iron alloys; magnetic tunnelling; magnetoelectronics; magnetoresistance; magnetoresistive devices; random-access storage; 0.13 micron; 1.2 V; CoFe-AlO; CoFe-AlOx material system; CoFeB-AlO; CoFeB-AlOx material system; MR-RA combination; MR-RA relation; high-speed operation; magnetic-tunneling-junction; magneto-resistance; magnetoresistive random access memory; resistance-area; CMOS technology; Circuits; Large scale integration; Magnetic devices; Magnetic materials; Manufacturing; Nonvolatile memory; Random access memory; Research and development; Tunneling magnetoresistance;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419226
