DocumentCode
3002362
Title
Improvement of robustness against write disturbance by novel cell design for high density MRAM
Author
Kai, T. ; Yoshikawa, M. ; Nakayama, M. ; Fukuzumi, Y. ; Nagase, T. ; Kitagawa, E. ; Ueda, T. ; Kishi, T. ; Ikegawa, S. ; Asao, Y. ; Tsuchida, K. ; Yoda, H. ; Ishiwata, N. ; Hada, H. ; Tahara, S.
Author_Institution
Corporate R&D Center, Toshiba Corp., Kawasaki, Japan
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
583
Lastpage
586
Abstract
A new bit cell designed to have an excellent astroid is presented from the viewpoints of both theory and experiment. The switching mechanism is unique. The robustness against the disturbance of half-selected bits is improved. Its excellent astroid improves thermal stability and has the potential to achieve extremely high density magnetoresistive random access memory (MRAM).
Keywords
integrated circuit design; magnetic switching; magnetoresistive devices; random-access storage; thermal stability; high density MRAM; magnetoresistive random access memory; switching mechanism; thermal stability; write disturbance robustness; Magnetic fields; Magnetic switching; Magnetic tunneling; Magnetization; Robust stability; Robustness; Shape; Switches; Thermal factors; Thermal stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419227
Filename
1419227
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