Title :
Improvement of robustness against write disturbance by novel cell design for high density MRAM
Author :
Kai, T. ; Yoshikawa, M. ; Nakayama, M. ; Fukuzumi, Y. ; Nagase, T. ; Kitagawa, E. ; Ueda, T. ; Kishi, T. ; Ikegawa, S. ; Asao, Y. ; Tsuchida, K. ; Yoda, H. ; Ishiwata, N. ; Hada, H. ; Tahara, S.
Author_Institution :
Corporate R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
A new bit cell designed to have an excellent astroid is presented from the viewpoints of both theory and experiment. The switching mechanism is unique. The robustness against the disturbance of half-selected bits is improved. Its excellent astroid improves thermal stability and has the potential to achieve extremely high density magnetoresistive random access memory (MRAM).
Keywords :
integrated circuit design; magnetic switching; magnetoresistive devices; random-access storage; thermal stability; high density MRAM; magnetoresistive random access memory; switching mechanism; thermal stability; write disturbance robustness; Magnetic fields; Magnetic switching; Magnetic tunneling; Magnetization; Robust stability; Robustness; Shape; Switches; Thermal factors; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419227
