• DocumentCode
    3002498
  • Title

    Exploring the limit of strain-induced performance gain in p- and n-SSDOI-MOSFETs

  • Author

    Bufler, F.M.

  • Author_Institution
    Inst. fur Integrierte Syst., Zurich, Switzerland
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    601
  • Lastpage
    604
  • Abstract
    We investigate by Monte Carlo simulation the strain-induced performance enhancement in n- and p-type SSDOI-MOSFETs under scaling to LG=10 nm with constant Ioff-obtained via adjusting the Si film thickness tSi. The improvement in the order of 30% at 50 and 25 nm strongly decreases at 10 nm involving even an absolute decrease of Ion.
  • Keywords
    MOSFET; Monte Carlo methods; nanoelectronics; semiconductor device models; 10 nm; 25 nm; 50 nm; Monte Carlo simulation; Si; film thickness adjustment; n-SSDOI-MOSFET; p-SSDOI-MOSFET; strain-induced performance enhancement; Anisotropic magnetoresistance; MOSFETs; Performance gain; Photonic band gap; Quantum mechanics; Semiconductor films; Silicon; Tensile strain; Threshold voltage; Uniaxial strain;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419233
  • Filename
    1419233
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3002498