Enhanced ballisticity in nano-MOSFETs along the ITRS roadmap: a Monte Carlo study

Author

Eminente, S. ; Esseni, D. ; Palestri, P. ; Fiegna, C. ; Selmi, L. ; Sangiorgi, E.

Author_Institution

ARCES Center, Bologna, Italy

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

609

Lastpage

612

Abstract

In this work we have simulated the I_ON and its ballistic limit I_BL of MOSFETs designed according to the 2003 roadmap down to the 45 nm node, by using a full-band, self-consistent Monte Carlo simulator with quantum mechanical corrections. Our results show that scattering plays an important role by limiting the current for gate length down to at least 14 nm; the impact of quasi-ballistic transport increases for L_G below approximately 50 nm and contribute most part of the I_ON improvements related to scaling. Thanks to a lower transversal electric field, the DG SOI MOSFETs with low channel doping allow to get closer to the ballistic limit than bulk counterparts.

Keywords

MOSFET; Monte Carlo methods; ballistic transport; nanotechnology; semiconductor device models; silicon-on-insulator; 45 nm; DG SOI MOSFET; Si; ballistic limit; enhanced ballisticity; full-band self-consistent Monte Carlo simulator; low channel doping; nano-MOSFET; quantum mechanical corrections; quasiballistic transport; transversal electric field; Analytical models; Ballistic transport; Doping; Electrodes; Light scattering; MOSFETs; Monte Carlo methods; Particle scattering; Phonons; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419235

Filename

1419235