3D quantum modeling and simulation of multiple-gate nanowire MOSFETs

Author

Bescond, M. ; Nehari, K. ; Autran, J.L. ; Cavassilas, N. ; Munteanu, D. ; Lannoo, M.

Author_Institution

Lab. Materiaux et Microelectronique de Provence, Marseille, France

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

617

Lastpage

620

Abstract

The electronic transport in multiple-gate devices is theoretically investigated at ultimate cross-section channel limit by modeling ballistic nanowire MOSFET architectures. The electrical performances of these structures are compared as a function of their "equivalent gate number" and gate configuration. In this approach, the 3D Schrodinger-Poisson system is self-consistently solved and the ballistic transport is treated with the nonequilibrium Green\´s function formalism.

Keywords

Green´s function methods; MOSFET; Poisson equation; Schrodinger equation; ballistic transport; electron transport theory; nanowires; semiconductor device models; 3D Schrodinger-Poisson system; 3D quantum modeling; 3D quantum simulation; ballistic nanowire MOSFET architecture; ballistic transport; electronic transport; equivalent gate number; gate configuration; multiple-gate device; multiple-gate nanowire MOSFET; nonequilibrium Green function formalism; ultimate cross-section channel limit; Ballistic transport; Dielectric substrates; MOSFETs; Nanoscale devices; Poisson equations; Scalability; Schrodinger equation; Semiconductor films; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419237

Filename

1419237