Molybdenum gate HfO2 CMOS FinFET technology

CMOS FinFETs with molybdenum gate and HfO₂ gate-dielectric are reported. By tuning the gate work function via nitrogen implantation and employing a narrow fin width, low values of threshold voltage (0.28/-0.17 V) and sub-threshold swing (67.5/62.5 mV/dec) were achieved. The use of HfO₂ rather than SiO₂ as the gate dielectric reduces the gate leakage current density by several orders of magnitude, for EOT in the range 1.75-1.95 nm. The observed weak temperature dependence for both electron and hole mobilities (μ_eff ∼ T^-0.95) is ascribed to soft phonon scattering.