DocumentCode
3003140
Title
Low-Threshold Current-Injection Single-Mode Lasing in T-shaped Quantum Wires with Parallel Doping Layer
Author
Liu, Shu-man ; Yoshita, Masahiro ; Okano, Makoto ; Ihara, Toshiyuki ; Itoh, Hirotake ; Akiyama, Hidefumi ; Pfeiffer, Loren N. ; West, Ken W. ; Baldwin, Kirk W.
Author_Institution
Univ. of Tokyo, Chiba
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
CW single-mode lasing from 30 K to 70 K with the lowest threshold current of 0.27 mA has been demonstrated in 20-period T-shaped quantum-wire laser diodes with parallel p and n doping layers.
Keywords
laser modes; quantum well lasers; semiconductor doping; semiconductor quantum wires; CW single-mode lasing; T-shaped quantum-wire laser diodes; current 0.27 mA; low-threshold current-injection single-mode lasing; parallel n doping layers; parallel p doping layers; temperature 30 K to 70 K; Diode lasers; Doping; Gallium arsenide; Molecular beam epitaxial growth; Optical imaging; Optical waveguides; Quantum well lasers; Radiative recombination; Threshold current; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452489
Filename
4452489
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