DocumentCode :
3003152
Title :
InP/AlGaInP on GaAs Quantum Dot Lasers
Author :
Smowton, P.M. ; Al-Ghamdi, M. ; Krysa, A.B.
Author_Institution :
Cardiff Univ., Cardiff
fYear :
2007
fDate :
6-11 May 2007
Firstpage :
1
Lastpage :
2
Abstract :
MOVPE grown InP Q-dot lasers have low 300 K threshold current density (195 Acm-2 for 2000 mum long device) and T0=105 K (10-85degC) for 725-740 nm emission. Homogenous broadening appears to be more pronounced than in InGaAs Q-dots.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; quantum dot lasers; spectral line broadening; InP-AlGaInP-GaAs; MOVPE; homogenous broadening; quantum dot lasers; temperature 10 degC to 85 degC; temperature 105 K; threshold current density; wavelength 725 nm to 740 nm; Absorption; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Laser modes; Quantum dot lasers; Temperature dependence; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
Type :
conf
DOI :
10.1109/CLEO.2007.4452490
Filename :
4452490
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3003152
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