• DocumentCode
    3003233
  • Title

    High frequency S parameters characterization of back-gate carbon nanotube field-effect transistors

  • Author

    Huo, X. ; Zhang, M. ; Chan, Philip C.H. ; Liang, Q. ; Tang, Z.K.

  • Author_Institution
    Dept. of EEE, Hong Kong Univ. of Sci. & Technol., China
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    691
  • Lastpage
    694
  • Abstract
    High frequency S parameters characterization up to 10 GHz for back-gate carbon nanotube field-effect transistors (CNFETs) was carried for the first time. The high frequency transmission properties of back-gate CNFETs were compared and analyzed at different gate bias voltages using a lumped element model.
  • Keywords
    S-parameters; carbon nanotubes; field effect transistors; S parameters; carbon nanotube; field-effect transistors; lumped element model; CNTFETs; Calibration; Chemical elements; FETs; Frequency measurement; Nanotubes; Scanning electron microscopy; Scattering parameters; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419263
  • Filename
    1419263
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003233