Title :
TiN-encapsulized copper interconnects for ULSI applications
Author :
Hoshino, K. ; Yagi, H. ; Tsuchikawa, H.
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
Abstract :
TiN-encapsulized Cu interconnects were developed for ultra-large-scale integration (ULSI) by nitriding the Cu-10%Ti alloy. The 500-nm-thick Cu-Ti alloy layer was separated into an upper TiN layer and a lower Cu layer after nitriding at 800°C. The interconnects had a higher oxidation resistance than Cu interconnects, and their resistivity was as low. The electromigration lifetime of the new interconnects was two orders of magnitude larger than that of pure Cu interconnects
Keywords :
VLSI; copper; electromigration; integrated circuit technology; metallisation; titanium compounds; 500 nm; 800 C; Cu interconnects; Cu-Ti alloy layer; TiN diffusion barrier; TiN-Cu; ULSI; VLSI; electromigration lifetime; encapsulated Cu metal; multilevel interconnection; nitriding; oxidation resistance; resistivity; ultra-large-scale integration; Aluminum; Conductivity; Copper alloys; Electromigration; Oxidation; Scanning electron microscopy; Surface resistance; Temperature; Tin; Ultra large scale integration;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE
Conference_Location :
Santa Clara, CA
DOI :
10.1109/VMIC.1989.78025
