Title :
Near Field Optical Spectroscopy Studies of Carrier Localization in AlxGa1-xN Alloys
Author :
Capek, P. ; Jha, Nilotpal ; Zhou, Liang ; Dierolf, V.
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
Using UV-near-field optical spectroscopy and AlGaN layers that exhibit a strong, red- shifted emission band, we demonstrate the existence of different localization regions that can be excited selectively with excitation below the bandgap.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; near-field scanning optical microscopy; red shift; ultraviolet spectroscopy; UV-near-field optical spectroscopy; bandgap excitation; carrier localization; red-shifted emission band; Electron optics; Fiber lasers; Laser excitation; Laser modes; Optical sensors; Photonic band gap; Plasma measurements; Spatial resolution; Spectroscopy; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452498
