Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT ∼ 1 nm) SiON films

Author

Kaczer, B. ; Degraeve, R. ; O´Connor, R. ; Roussel, Ph ; Groeseneken, G.

Author_Institution

IMEC, Leuven, Belgium

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

713

Lastpage

716

Abstract

Reliability extrapolation of ultrathin (EOT <∼1.5nm) SiON films is greatly hindered by the inability to detect the actual first breakdown. Using larger increases in gate current as the breakdown criterion leads to erroneous lifetime predictions. A semi-empirical model for progressive breakdown wear-out is constructed and corrected methodology for reliability extrapolation for ultrathin oxides is proposed.

Keywords

dielectric thin films; electric breakdown; isolation technology; semiconductor device reliability; silicon compounds; SiON; breakdown detection; lifetime extrapolation; lifetime predictions; progressive breakdown wear-out; reliability extrapolation; semiempirical model; ultra-thin film; ultrathin oxides; Acceleration; Breakdown voltage; Dielectric breakdown; Electric breakdown; Extrapolation; Leak detection; Leakage current; Logic gates; Low voltage; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419270

Filename

1419270

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003375