Title :
Implications of progressive wear-out for lifetime extrapolation of ultra-thin (EOT ∼ 1 nm) SiON films
Author :
Kaczer, B. ; Degraeve, R. ; O´Connor, R. ; Roussel, Ph ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
Reliability extrapolation of ultrathin (EOT <∼1.5nm) SiON films is greatly hindered by the inability to detect the actual first breakdown. Using larger increases in gate current as the breakdown criterion leads to erroneous lifetime predictions. A semi-empirical model for progressive breakdown wear-out is constructed and corrected methodology for reliability extrapolation for ultrathin oxides is proposed.
Keywords :
dielectric thin films; electric breakdown; isolation technology; semiconductor device reliability; silicon compounds; SiON; breakdown detection; lifetime extrapolation; lifetime predictions; progressive breakdown wear-out; reliability extrapolation; semiempirical model; ultra-thin film; ultrathin oxides; Acceleration; Breakdown voltage; Dielectric breakdown; Electric breakdown; Extrapolation; Leak detection; Leakage current; Logic gates; Low voltage; Stress;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419270
