Detrimental effects limiting the performances of InP HEMT-based OEICs

Author

Berthelemot, C. ; Vigier, P. ; Dumas, J.M. ; Audren, P. ; Clei, A. ; Harmand, J.C.

Author_Institution

Limoges Univ., France

fYear

1997

fDate

11-15 May 1997

Firstpage

161

Lastpage

164

Abstract

An investigation has been carried out on InAlAs/InGaAs HEMTs dedicated to monolithic optoelectronic integrated circuits (OEICs) for receiver as well as transmitter applications. The monolithic integration on InP semi-insulating substrates can be penalized by several parasitic effects related to trapping/detrapping mechanisms originated in the substrate and/or buffer layers. These parasitics have been studied in three MBE-grown HEMT structures, one of them previously demonstrated as efficient in the reduction of the gate current induced by an impact ionisation mechanism developing in the InGaAs channel layer

Keywords

HEMT integrated circuits; III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hole traps; impact ionisation; indium compounds; integrated optoelectronics; optical receivers; optical transmitters; InAlAs-InGaAs-InP; InAlAs/InGaAs HEMTs; InGaAs channel layer; InP; InP HEMT-based OEICs; InP semi-insulating substrates; MBE-grown HEMT structures; buffer layers; gate current; impact ionisation mechanism; monolithic optoelectronic integrated circuits; parasitic effects; performance limiting detrimental effects; receiver applications; substrate layer; transmitter applications; trapping/detrapping mechanisms; Application specific integrated circuits; Buffer layers; HEMTs; Impact ionization; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Monolithic integrated circuits; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600079

Filename

600079