• DocumentCode
    3003496
  • Title

    Micro-pixellated flip-chip InGaN and AlInGaN light-emitting diodes

  • Author

    Griffin, C. ; Zhang, H.X. ; Guilhabert, B. ; Massoubre, D. ; Gu, E. ; Dawson, M.D.

  • Author_Institution
    Univ. of Strathclyde, Glasgow
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Fip-chip GaN-based micro-LED arrays have been fabricated consisting of 256 (16 times 16) micropixels, each of diameter 72 mum. Output characteristics are compared to broad-area reference LED devices fabricated from the same wafers.
  • Keywords
    III-V semiconductors; aluminium compounds; flip-chip devices; indium compounds; light emitting diodes; optical arrays; AlInGaN; InGaN; flip-chip; light-emitting diodes; micro-LED arrays; size 72 mum; Bonding; Chemicals; Contacts; Gallium nitride; Light emitting diodes; Optical arrays; Optical devices; Optical microscopy; Protection; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452512
  • Filename
    4452512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003496