• DocumentCode
    3003527
  • Title

    HVPE-grown n-InGaN/p-GaN Single Heterostructure LED With p-side Down

  • Author

    Reed, M.L. ; Readinger, E.D. ; Sampath, A.V. ; Garrett, G.A. ; Shen, H. ; Wraback, M. ; Syrkin, A. ; Usikov, A. ; Dmitriev, V.A.

  • Author_Institution
    Sensors & Electron Devices Directorate, Adelphi
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    An HVPE-grown n-InGaN/p-GaN single heterojunction LED with p-side down and emission at ~ 480nm has been demonstrated. Benefits of the p-down geometry for such an LED associated with polarity are discussed.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; vapour phase epitaxial growth; HVPE growth; InGaN-GaN; hydride vapor phase epitaxy growth; p-down geometry; p-side down; polarity; single heterostructure LED; Chemical technology; Electrons; Heterojunctions; Indium tin oxide; Light emitting diodes; Optical sensors; Performance evaluation; Sea measurements; Spectroscopy; Stimulated emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452513
  • Filename
    4452513
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3003527