Predictive compact modeling of NQS effects and thermal noise in 90nm mixed-signal/RF CMOS technology

Author

Shih, Wei-kai ; Mudanai, Siva ; Rios, Rafael ; Packan, Paul ; Becher, David ; Basco, Ricardo ; Hung, Celia ; Jalan, Umesh

Author_Institution

Technol. CAD, Intel Corp., Santa Clara, CA, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

747

Lastpage

750

Abstract

Predictive compact models have been developed to describe NQS effects and thermal noise in Intel´s 90nm radio-frequency (RF) CMOS (Kuhn, et al., 2002). The physical approach enables modeling transistor performance from DC to RF with one single set of parameters. Quantum correction on classical induced-gate-noise model is observed for the first time in ultra-thin oxide technology.

Keywords

CMOS integrated circuits; MOSFET; radiofrequency integrated circuits; semiconductor device models; semiconductor device noise; thermal noise; 90 nm; DC to RF performance; NQS effects; induced-gate-noise model; mixed-signal/RF CMOS technology; nonquasistatic effect; predictive compact modeling; quantum correction; radio-frequency CMOS; thermal noise; transistor performance; ultra-thin oxide technology; CMOS technology; Educational institutions; Equations; MOSFETs; Noise generators; Predictive models; RF signals; Radio frequency; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419280

Filename

1419280