Title :
Enhancement of Radiative Efficiency of Nitride-Based LEDs via Staggered InGaN Quantum Wells Emitting at 420-500 nm
Author :
Arif, Ronald A. ; Ee, Yik-Khoon ; Tansu, Nelson
Author_Institution :
Lehigh Univ., Bethlehem
Abstract :
Polarization band engineering via staggered InGaN quantum well allows enhancement of radiative recombination rate, leading to significant improvement of luminescence and LEDs output power by > ~4 times.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; polarisation; quantum well lasers; wide band gap semiconductors; InGaN; LED; polarization band engineering; quantum wells; radiative efficiency enhancement; wavelength 420 nm to 500 nm; Biomedical optical imaging; Charge carrier processes; Gallium nitride; Light emitting diodes; Luminescence; Optical buffering; Radiative recombination; Stimulated emission; Temperature measurement; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452515
