Title :
Temperature Effect of Photoluminescence from Aqueous CdSe Quantum Dots
Author :
Yi, J. ; An, L.M. ; Han, X.T. ; Liu, C.X. ; Chi, J.G. ; Wen, Y.N.
Author_Institution :
Coll. of Phys. Sci. & Technol., Heilongjiang Univ., Harbin, China
Abstract :
Thiol-capped CdSe quantum dots are synthesized rapidly in aqueous solution assisted by microwave irradiation without any poisonous materials. The growth rate of quantum dots is greatly enhanced in this current microwave synthesis. The narrow size distribution (~30nm) of CdSe quantum dots is similar to the oil samples. The results indicate that the photoluminescence quality of quantum dots is improved effectively assisted by microwave irradiation compared to traditional aqueous solution. Room and low temperature photoluminescence is employed to investigate the excitonic emission from thiol-capped CdSe quantum dots between 83K and 300K. The photoluminescence peak position of CdSe quantum dots shift to shorter wavelengths. The relationship between the shift wavelengths and the temperature is linear. The slope for linear fitting curve is nearly constant in repeated experiment. This implies CdSe quantum dots may be applied in the low temperature nano-sensor. The photoluminescence intensity first enhances and then quench with decrease of temperature. The temperature dependence of the photoluminescence intensity is demonstrated through thermal escape and thermal rectification of surface trap states.
Keywords :
II-VI semiconductors; cadmium compounds; excitons; photoluminescence; radiation quenching; semiconductor growth; semiconductor quantum dots; solutions; spectral line shift; surface states; wide band gap semiconductors; CdSe; aqueous CdSe quantum dots; aqueous solution; excitonic emission; growth rate; linear fitting curve; low temperature nanosensor; low temperature photoluminescence; microwave irradiation; microwave synthesis; narrow size distribution; photoluminescence intensity; photoluminescence peak position; photoluminescence quality; quenching; shift wavelengths; surface trap states; temperature 83 K to 300 K; temperature dependence; temperature effect; thermal escape; thermal rectification; thiol-capped CdSe quantum dots; Absorption; Microwave theory and techniques; Photoluminescence; Quantum dots; Radiation effects; Temperature; Temperature dependence;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6270976