A compact QM-based mobility model for nanoscale ultra-thin-body CMOS devices

Author

Trivedi, V.P. ; Fossum, J.G. ; Gámiz, F.

Author_Institution

Florida Univ., Gainesville, FL, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

763

Lastpage

766

Abstract

Physical insights, Monte Carlo simulations, and QM-(quantum mechanics) based analysis are used to develop a compact model for effective carrier mobility in generic ultra-thin-body (UTB) silicon CMOS devices. The model accounts for crucial dependences on UTB thickness as well as electric field and crystal orientation, and has only two tuning parameters that can be calibrated via measurements of mobility in thick-body devices. It is verified using large sets of measured data from FD/SOI and DG MOSFETs.

Keywords

CMOS integrated circuits; MOSFET; Monte Carlo methods; carrier mobility; nanoelectronics; semiconductor device models; size effect; DG MOSFET; FD/SOI; Monte Carlo simulations; UTB thickness; carrier mobility; compact QM-based mobility model; crystal orientation; electric field; nanoscale ultra-thin-body CMOS devices; quantum mechanics based analysis; silicon CMOS devices; thick-body devices; Analytical models; CMOS technology; Electrostatics; MOS devices; MOSFETs; Nanoscale devices; Predictive models; Quantum mechanics; Semiconductor device modeling; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419284

Filename

1419284