DocumentCode
3003817
Title
Novel high-Q bondwire inductors for RF and microwave monolithic integrated circuits
Author
Sung-Jin Kim ; Yong-Goo Lee ; Sang-Ki Yun ; Hai-Young Lee
Author_Institution
Sch. of Electron. Eng., Ajou Univ., Suwon, South Korea
Volume
4
fYear
1999
fDate
13-19 June 1999
Firstpage
1621
Abstract
A novel high-Q on-chip inductor using bondwire loops is proposed for low cost and high performance silicon RF and microwave monolithic integrated circuits. The measured maximum quality factor and the self-resonant frequency are 29(18) and 19.6(12) GHz for 2.8(4.9) nH inductance, respectively. The bondwire inductor is expected to greatly improve the performance of silicon RFIC´s and MMIC´s.
Keywords
MMIC; Q-factor; elemental semiconductors; inductors; lead bonding; silicon; 12 GHz; 19.6 GHz; RF monolithic integrated circuit; Si; bondwire loop; high-Q on-chip inductor; inductance; microwave monolithic integrated circuit; quality factor; self-resonant frequency; silicon MMIC; silicon RFIC; Bonding; Costs; Frequency measurement; Inductance measurement; Inductors; Integrated circuit measurements; Monolithic integrated circuits; Q factor; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.780280
Filename
780280
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