DocumentCode
3003875
Title
Impact of transistor-to-grain size statistics on large-grain polysilicon TFT characteristics
Author
Cheng, C.F. ; Poon, M.C. ; Kok, C.W. ; Chan, Mansun
Author_Institution
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., China
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
789
Lastpage
792
Abstract
A model based on grain-boundary distribution to predict the impact of transistor-to-grain size statistics on transistor performance variation is proposed and extensively verified by experimental data. Using the model, optimization of transistor dimension with respect to grain size to achieve high mobility and low transistor-to-transistor variation to enhance the yield can be performed.
Keywords
carrier mobility; crystal growth; crystallisation; elemental semiconductors; grain boundaries; grain size; semiconductor device models; silicon; thin film transistors; carrier mobility; grain-boundary distribution; large-grain polysilicon TFT characteristics; thin film transistors; transistor dimension; transistor performance variation; transistor-to-grain size statistics; transistor-to-transistor variation; Crystallization; Degradation; Electronic mail; Grain boundaries; Grain size; Predictive models; Solid modeling; Statistical distributions; Statistics; Thin film transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419292
Filename
1419292
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