DocumentCode
3003928
Title
Recent advances in III-V nitride electronic devices
Author
Pavlidis, Dimitris
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
795
Lastpage
798
Abstract
The latest developments made using III-V nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN-based HEMTs, MISFETs and HBTs. Circuit types reviewed include power and low-noise amplifiers. Nitride technology is also investigated for mixer and switch applications.
Keywords
III-V semiconductors; MISFET; aluminium compounds; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; microwave integrated circuits; millimetre wave integrated circuits; power amplifiers; wide band gap semiconductors; AlGaN-GaN; HBT; HEMT; III-V nitride electronic devices; MISFET; low-noise amplifiers; microwave integrated circuits; millimeter wave integrated circuits; mixer; power amplifiers; semiconductor device design; switch; Aluminum gallium nitride; Circuit optimization; HEMTs; III-V semiconductor materials; MISFETs; MODFETs; Microwave devices; Microwave technology; Process design; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419295
Filename
1419295
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