350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure

Author

Hikita, Masahiro ; Yanagihara, Manabu ; Nakazawa, Kazushi ; Ueno, Hiroaki ; Hirose, Yutaka ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Tanaka, Tsuyoshi ; Ueda, Daisuke ; Egawa, Takashi

Author_Institution

Semicond. Device Res. Center, Matsushita Electr. Ind. Co., Ltd., Kyoto, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

803

Lastpage

806

Abstract

We present a high power AlGaN/GaN HFET fabricated on a conductive Si substrate with a source-via grounding (SVG) structure. The device has a very low specific on-state resistance of 1.9 mΩ·cm² and a high off-state breakdown voltage of 350 V, and a current handling capability of 150 A. In addition, a sub-nano second switching t_r of 98 psec and t_f of 96 psec, with a current density as high as 2.0 kA/cm² is demonstrated for the first time.

Keywords

III-V semiconductors; aluminium compounds; current density; elemental semiconductors; gallium compounds; power field effect transistors; semiconductor device breakdown; silicon; wide band gap semiconductors; 150 A; 350 V; 96 psec; 98 psec; AlGaN-GaN; Si; conductive Si substrate; current density; current handling capability; high power HFET; off-state breakdown voltage; semiconductor device fabrication; silicon substrate; source-via grounding structure; specific on-state resistance; sub-nano second switching; Buffer layers; Current density; Gallium nitride; Grounding; HEMTs; Heterojunctions; MODFETs; Semiconductor devices; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419297

Filename

1419297