DocumentCode
3004099
Title
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO2 stack
Author
Tseng, H.-H. ; Capasso, C.C. ; Schaeffer, J.K. ; Hebert, E.A. ; Tobin, P.J. ; Gilmer, D.C. ; Triyoso, D. ; Ramon, M.E. ; Kalpat, S. ; Luckowski, E. ; Taylor, W.J. ; Jeon, Y. ; Adetutu, O. ; Hegde, R.I. ; Noble, R. ; Jahanbani, M. ; El Chemali, C. ; White,
Author_Institution
Technol. Solution Organ., Freescale Semicond., Austin, TX, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
821
Lastpage
824
Abstract
Threshold voltage instability is a critical problem for high-K dielectric implementation. This problem is much more serious for short channel devices due to process induced gate edge damage. A novel stress relieved pre-oxide (SRPO) followed by ALD of HfO2 reduces the local charge density near the gate edge and short channel threshold voltage instability. Excellent cross wafer CETinv uniformity is achieved for the SRPO process. A new tantalum carbon alloy metal gate achieves a lower Vtsat than TaSiN gated devices due to a lower work function. Compared to HfO2/TaSiN devices using standard RCA pre-clean, HfO2/tantalum carbon alloy metal gate stack using the novel SRPO demonstrates a 3× smaller Vt shift for short channel devices and a 16% Ion/Ioff improvement.
Keywords
dielectric devices; hafnium compounds; insulated gate field effect transistors; semiconductor device breakdown; tantalum compounds; HfO2-TaSiN; Ion/Ioff improvement; cross wafer CETinv uniformity; high-K dielectric; local charge density; process induced gate edge damage; short channel device characteristics; standard RCA pre-clean; stress relieved pre-oxide; tantalum carbon alloy metal gate; threshold voltage instability; threshold voltage saturation; threshold voltage shift; work function; Annealing; CMOS process; Dielectric substrates; Fabrication; Hafnium oxide; High-K gate dielectrics; Silicon; Temperature; Thermal stresses; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419303
Filename
1419303
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