• DocumentCode
    3004142
  • Title

    Impact of oxygen vacancies on high-κ gate stack engineering

  • Author

    Takeuchi, Hideki ; Wong, Hiu Yung ; Ha, Daewon ; King, Tsu-Jae

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
  • fYear
    2004
  • fDate
    13-15 Dec. 2004
  • Firstpage
    829
  • Lastpage
    832
  • Abstract
    The impact of oxygen vacancies in Hf-based gate dielectrics is discussed. Generation of oxygen vacancies in HfO2 is thermodynamically driven and causes Si interfacial layer formation and gate Fermi-level pinning in MOS devices. Hence, it is necessary to prevent oxygen transport across both top and bottom gate-dielectric interfaces through careful design of material system and thermal processing steps.
  • Keywords
    Fermi level; MIS devices; dielectric devices; hafnium compounds; interface states; oxygen; silicon; vacancies (crystal); Hf-based gate dielectrics; HfO2; MOS devices; O; Si; Si interfacial layer formation; bottom gate-dielectric interfaces; gate Fermi-level pinning; high-κ gate stack engineering; oxygen transport; oxygen vacancies; semiconductor device design; thermal processing; top gate-dielectric interfaces; Absorption; Annealing; Dielectric materials; Electron traps; Energy states; Hafnium; High K dielectric materials; MOS devices; Oxidation; Oxygen;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
  • Print_ISBN
    0-7803-8684-1
  • Type

    conf

  • DOI
    10.1109/IEDM.2004.1419305
  • Filename
    1419305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3004142