DocumentCode
3004152
Title
Spectral measurements of the third-order nonlinearity of bulk silicon in the near infrared region
Author
Zhang, J. ; Lin, Q. ; Piredda, G. ; Boyd, R.W. ; Agrawal, G.P. ; Fauchet, P.M.
Author_Institution
Univ. of Rochester, Rochester
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We report the first detailed characterization, to the best of our knowledge, of wavelength dependence of two-photon absorption and the Kerr nonlinearity in silicon over a spectral range extending from 1.2 to 2.4 mum.
Keywords
absorption coefficients; elemental semiconductors; nonlinear optics; silicon; two-photon spectroscopy; Kerr nonlinearity; Si; bulk silicon; near infrared region; spectral measurements; third-order nonlinearity; two-photon absorption; Absorption; Infrared spectra; Nonlinear optics; Optical amplifiers; Optical attenuators; Optical modulation; Optical wavelength conversion; Pulse amplifiers; Silicon; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452548
Filename
4452548
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