Title :
Spectral measurements of the third-order nonlinearity of bulk silicon in the near infrared region
Author :
Zhang, J. ; Lin, Q. ; Piredda, G. ; Boyd, R.W. ; Agrawal, G.P. ; Fauchet, P.M.
Author_Institution :
Univ. of Rochester, Rochester
Abstract :
We report the first detailed characterization, to the best of our knowledge, of wavelength dependence of two-photon absorption and the Kerr nonlinearity in silicon over a spectral range extending from 1.2 to 2.4 mum.
Keywords :
absorption coefficients; elemental semiconductors; nonlinear optics; silicon; two-photon spectroscopy; Kerr nonlinearity; Si; bulk silicon; near infrared region; spectral measurements; third-order nonlinearity; two-photon absorption; Absorption; Infrared spectra; Nonlinear optics; Optical amplifiers; Optical attenuators; Optical modulation; Optical wavelength conversion; Pulse amplifiers; Silicon; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452548
