On-wafer load pull characterization of W-band InP HEMT unit cells for CPW MMIC medium power amplifiers

Author

Baker, D.W. ; Robertson, R.S. ; Kihm, R.T. ; Matloubian, M. ; Yu, M. ; Bowen, R.

Author_Institution

Raytheon Syst. Co., Tucson, AZ, USA

Volume

4

fYear

1999

fDate

13-19 June 1999

Firstpage

1743

Abstract

A W-Band on-wafer, vector source and load pull system has been implemented and applied to the systematic determination of the optimum, large signal, input and output impedances of indium phosphide (InP) HEMT cells as a function of bias and high power RF drive. The large signal optimization of a variety of device styles and sizes, so as to achieve a priori W-band power and gain goals, resulted in an optimal HEMT cell geometry and first pass design success of W-band, finite ground coplanar waveguide (FGCPW) medium power amplifiers. These state-of-the-art amplifiers employing single 150 /spl mu/m and 250 /spl mu/m device cells deliver output powers of 13.8 dBm and 16.7 dBm with efficiencies of 23% and 17.5%, respectively.

Keywords

III-V semiconductors; MMIC power amplifiers; coplanar waveguide components; high electron mobility transistors; indium compounds; millimetre wave transistors; 17.5 percent; 23 percent; CPW MMIC medium power amplifier; InP; W-band InP HEMT unit cell; finite ground coplanar waveguide; on-wafer load pull characteristics; vector source; Design optimization; Geometry; HEMTs; Impedance; Indium phosphide; Power amplifiers; RF signals; Radio frequency; Radiofrequency amplifiers; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.780308

Filename

780308