DocumentCode
3004365
Title
Ultra-fast measurements of the inversion charge in MOSFETs and impact on measured mobility in high-k MOSFETs
Author
Singh, D.V. ; Solomon, P. ; Gusev, E.P. ; Singco, G. ; Ren, Z.
Author_Institution
IBM, Yorktown Heights, NY, USA
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
863
Lastpage
866
Abstract
We introduce a novel method for ultra-fast (<100 ns) measurement of the inversion charge in MOSFETs thereby minimizing the impact of charge trapping. This technique in conjunction with pulsed I-V measurements shows only a modest enhancement in peak mobility (∼15%) in high-FC gate dielectric devices, indicating that charge trapping does not fully account for observed mobility degradation.
Keywords
MOSFET; carrier mobility; charge measurement; dielectric devices; semiconductor device measurement; carrier mobility; charge trapping; high-FC gate dielectric devices; high-k MOSFET; inversion charge measurement; mobility degradation; peak mobility; pulsed I-V measurements; ultra-fast measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MOSFETs; Pulse measurements; Space vector pulse width modulation; Time measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419315
Filename
1419315
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