Title :
Experimental determination of mobility scattering mechanisms in Si/HfO2/TiN and SiGe:C/HfO2/TiN surface channel n- and p-MOSFETs
Author :
Weber, O. ; Andrieu, F. ; Cass, M. ; Ernst, T. ; Mitard, J. ; Ducroquet, F. ; Damlencourt, J.F. ; Hartmann, J.-M. ; Lafond, D. ; Papon, A.M. ; Militaru, L. ; Thevenod, L. ; Romanjek, K. ; Leroux, C. ; Martin, F. ; Guillaumot, B. ; Ghibaudo, G. ; Deleonibu
Author_Institution :
CEA-DRT/LETI, Grenoble, France
Abstract :
We demonstrate by an extensive experimental study of HfO2/TiN and SiO2/TiN gate stacked-transistors compared with the SiO2/poly-Si reference, that the hole mobility is mainly degraded by the surface roughness (SR) linked to the presence of TiN. We thus propose high mobility SiGe or SiGe:C surface channel pMOSFETs with HfO2/TiN gate stacks using an adequate valence band engineering near the dielectric/channel interface (up to 100% hole mobility enhancement at Eeff = 1 MV/cm). On the other hand, the electron mobility with HfO2/TiN gate stacks is reduced by remote Coulomb scattering (RCS).
Keywords :
Ge-Si alloys; MOSFET; electron mobility; hafnium compounds; hole mobility; silicon compounds; surface roughness; titanium compounds; valence bands; HfO2-TiN; HfO2/TiN gate stacks; Si-HfO2-TiN; SiGe:C-HfO2-TiN; SiO2-TiN; dielectric/channel interface; electron mobility; gate stacked-transistors; hole mobility enhancement; mobility scattering mechanisms; n-MOSFET; p-MOSFET; remote Coulomb scattering; surface channel; surface roughness; valence band engineering; Degradation; Germanium silicon alloys; Hafnium oxide; MOSFETs; Rough surfaces; Scattering; Silicon germanium; Strontium; Surface roughness; Tin;
Conference_Titel :
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN :
0-7803-8684-1
DOI :
10.1109/IEDM.2004.1419316
