Theoretical analysis of wurtzite and zincblende phase GaN avalanche transit time device in millimeter-wave frequencies

Author

Meng, C.C. ; Liao, G.R. ; Chen, J.W.

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan

Volume

4

fYear

1999

fDate

13-19 June 1999

Firstpage

1777

Abstract

GaN is the suitable material for millimeter-wave high power IMPATT oscillators because of its superior electronic properties-high breakdown electric fields and high electron saturation velocity. In this paper, millimeter-wave wurtzite phase and zincblende phase GaN IMPATT oscillators at elevated temperature are analyzed by a Read type large signal model. The power density of GaN IMPATT devices at millimeter-wave frequencies is two orders magnitude higher than that of conventional GaAs and Si IMPATT devices. The simulations showed that GaN wurtzite phase p/sup +/n single-drift flat-profile IMPATT oscillators at 300 GHz have efficiency of 11% and r.f. power density of 1.6 MW/cm/sup 2/ when operated at 800 K.

Keywords

III-V semiconductors; IMPATT oscillators; gallium compounds; millimetre wave diodes; millimetre wave oscillators; semiconductor device models; wide band gap semiconductors; 11 percent; 300 GHz; 800 K; GaN; GaN avalanche transit time device; RF power density; Read large-signal model; breakdown electric field; efficiency; electron saturation velocity; electronic properties; ionization rate; millimeter-wave high power IMPATT oscillator; simulation; wurtzite phase; zincblende phase; Electric breakdown; Electrons; Frequency; Gallium arsenide; Gallium nitride; Ionization; Millimeter wave technology; Optical materials; Oscillators; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1999 IEEE MTT-S International

Conference_Location

Anaheim, CA, USA

Print_ISBN

0-7803-5135-5

Type

conf

DOI

10.1109/MWSYM.1999.780316

Filename

780316