High-k HfAlO charge trapping layer in SONOS-type nonvolatile memory device for high speed operation

Author

Tan, Yan Ny ; Chim, Wai Kin ; Choi, Wee Kiong ; Joo, Moon Sig ; Ng, Tsu Hau ; Cho, Byung Jin

Author_Institution

Dept. of Electr. & Comput. Eng., National Univ. of Singapore, Singapore

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

889

Lastpage

892

Abstract

A HfAlO charge storage layer in SONOS (polysilicon-oxide-silicon nitride-oxide-silicon)-type memory with a SiO₂/high-K/SiO₂ (SOHOS) structure is proposed. Compared to other high-K charge storage layers, HfAlO shows the advantages of high speed program/erase of HfO₂ as well as good charge retention of Al₂O₃, which makes HfAlO the most promising candidate for the charge storage layer. The charge storage and program/erase mechanisms of different charge storage layers in SONOS-type structures are also investigated.

Keywords

aluminium compounds; flash memories; hafnium compounds; integrated memory circuits; semiconductor-insulator-semiconductor devices; silicon compounds; Al₂O₃; HfAlO; HfO₂; SONOS-type memory; SiO₂; SiO₂/high-K/SiO₂ structure; charge retention; charge storage layer; charge trapping layer; nonvolatile memory device; polysilicon-oxide-silicon nitride-oxide-silicon; program/erase mechanisms; Chemicals; Degradation; Flash memory; High K dielectric materials; High-K gate dielectrics; Moon; Nonvolatile memory; SONOS devices; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419323

Filename

1419323