Simulation of density variation and step coverage for via metallization

Author

Smy, T. ; Tait, R.N. ; Westra, K.L. ; Brett, M.J.

Author_Institution

Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada

fYear

1989

fDate

12-13 Jun 1989

Firstpage

292

Lastpage

298

Abstract

A ballistic deposition technique, SIMBAD, has been developed and used to simulate sputter deposition of metal over a 2-μm step and over 1-μm vias of various geometries. In addition to generating step coverage and surface profiles at different stages of growth, SIMBAD provides further information unattainable through conventional film growth simulation packages. Predictions of local film density and microstructure are presented, and low-density regions occurring on the sidewalls and in corners of steps and vias are analyzed

Keywords

VLSI; digital simulation; electronic engineering computing; metallisation; 1 micron; 2 micron; SIMBAD; VLSI; ballistic deposition technique; corners of steps; density variation; film growth simulation packages; local film density; low-density regions; microstructure; multilevel interconnection; sidewalls; sputter deposition of metal; step coverage; surface profiles; via metallization; Atomic layer deposition; Computational modeling; Geometry; Metallization; Microstructure; Solid modeling; Sputtering; Substrates; Surface topography; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.78033

Filename

78033