Novel InAlAs/InGaAs heterojunction FETs with modulated indium composition channel and AlAs/InAs superlattice barrier layer

Author

Onda, K. ; Fujihara, A. ; Wakejima, A. ; Mizuki, E. ; Nakayama, T. ; Miyamoto, H. ; Ando, Y. ; Kanamori, M.

Author_Institution

Kansai Electron. Res. Lab., NEC Corp., Shiga, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

185

Lastpage

188

Abstract

Novel InAlAs/InGaAs heterojunction FETs (HJFETs) with modulated indium composition channels, named CCMTs (Channel Composition Modulated Transistors), have been successfully fabricated, in which an InAs channel is sandwiched by In_0.53Ga_0.47As/In_0.8Ga_0.2As sub-channels. The channel structure is designed to improve electron transport and electron confinement by increase effective indium content in consideration of channel electron distribution. The fabricated devices also employ an AlAs/InAs superlattice as a barrier layer against impurity contamination for high thermal stability. A 0.2 μm T-shaped gate device exhibits gm of 1370 mS/mm, and Ft of 180 GHz at a low drain bias of 1.0 V. In high temperature and DC life test conducted at more than 230°C, the devices exhibited less than 3% degradation after 100 hrs, which shows the developed CCMTs with AlAs/InAs superlattice insertion technology can offer high-performance and highly-reliable InP-based HJFETs for various microwave and millimeter-wave applications

Keywords

III-V semiconductors; aluminium compounds; diffusion barriers; gallium arsenide; indium compounds; junction gate field effect transistors; life testing; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device reliability; semiconductor device testing; semiconductor superlattices; thermal stability; 0.2 mum; 1 V; 100 hour; 1370 mS/mm; 180 GHz; 230 C; AlAs-InAs; AlAs/InAs superlattice barrier layer; HJFETs; In_0.53Ga_0.47As-In_0.8Ga_0.2As; In_0.53Ga_0.47As/In_0.8Ga_0.2As sub-channels; InAlAs/InGaAs heterojunction FETs; T-shaped gate device; channel composition modulated transistors; channel electron distribution; electron confinement; electron transport; high reliability; high temperature DC life test; high thermal stability; impurity contamination barrier layer; low drain bias; microwave applications; millimeter-wave applications; modulated In composition channel; transconductance; Contamination; Electrons; FETs; Heterojunctions; Impurities; Indium compounds; Indium gallium arsenide; Superlattices; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600086

Filename

600086